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Insulated Gate Bipolar Transistor(IGBT)
Product
Insulated Gate Bipolar Transistor(IGBT)
产品型号
PD
IC
VCES
VCE(sat)
VGE(th)
管脚排列
封装
TYPE
(W)
(A)
(V)
(V)
IC(A)
VGE (V)
VCE(V)
IC(mA)
MIN.
MAX.
LEAD ARRANGING
Package
clear
GCE
TO-3P
TO-247
TO-252
BRG10N120D
208
20
1200
2.4
10
15
15
0.4
5.2
6.5
GCE
TO-3P
BRG15N120D
186
30
1200
2.5
15
15
15
15
3.5
7.5
GCE
TO-3P
BRG20N120D
240
40
1200
2.5
20
15
15
15
3.5
7.5
GCE
TO-3P
BRG25N120D
312
50
1200
2.5
25
15
15
15
3.5
7.5
GCE
TO-3P
BRG60N65D
310
120
650
2.2
60
15
15
0.8
5.3
6.3
GCE
TO-3P
BRG60N60D
310
120
600
2.9
60
15
-
0.5
4
6
GCE
TO-3P
BRGH15N120D
150
30
1200
2.5
15
15
15
0.6
4.5
6.5
GCE
TO-247
BRGH25N120D
350
50
1200
2.45
25
15
15
0.6
4.5
6.5
GCE
TO-247
BRGB6N65DP
69
12
650
1.98
6
15
5
1
5.3
5.3
GCE
TO-252
Total: 9 Page
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